Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

Also called a "bipolar junction transistor" (BJT), it is one of two major transistor categories; the other is "field-effect transistor" (FET). Although the first transistor was bipolar and the first ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

Researchers have developed a highly efficient organic bipolar transistor. The work opens up new perspectives for organic electronics -- both in data processing and transmission, as well as in medical ...

This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...

The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...

In the early days, PNP bipolar transistors were common, but the bulk of circuits you see today use NPN transistors. As [Aaron Danner] points out, many people think PNP transistors are “backward” but ...

Diodes has introduced a series of low saturation npn and pnp bipolar transistors optimised for automotive power switching and control. “With BVceo up to 100V, continuous current to 10A – and 20A peak ...

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The first transistor was successfully demonstrated at Bell Laboratories in Murray Hill, New Jersey, in 1947. This three-terminal device has spawned many of the electronics devices that make possible ...

We like to pretend that our circuit elements are perfect because, honestly, it makes life easier and it often doesn’t matter much in practice. For a normal design, the fact that a foot of wire has a ...